irl220-223/irf620-623 mtp7n18/7n20 n-channel power mosfets 7a,150-200v www.artschip.com 1 description these device are n-channel , enhancement mode, power mosfets designed especially for high speed applications, such as switching power supplies, converters, ac and dc motor controls, relay and solenoid drivers and other pulse circuits. z low r ds(on) z v gs rated at 20v z silicon gate for fast switching speeds z i dss , v ds(on) , specified at elevated temperature z rugged z low drive requirements z ease of paralleling to-204aa irf220 irf221 irf222 irf223 to-220ab irf620 irf622 irf623 mtp7n18 MTP7N20 product summary part number v dss r dss(on) i d at tc=25 i d at tc=100 case style irf220 200v 0.8 ? 5.0a 3.0a irf221 150v 0.8 ? 5.0a 3.0a irf222 200v 1.2 ? 4.0a 2.5a irf223 150v 1.2 ? 4.0a 2.5a tp-204aa irf620 200v 0.8 ? 5.0a 3.0a irf621 150v 0.8 ? 5.0a 3.0a irf622 200v 1.2 ? 4.0a 2.5a irf623 150v 1.2 ? 4.0a 2.5a mtp7n18 180v 0.7 ? 7.0a 4.5a MTP7N20 200v 0.7 ? 7.0a 4.5a to-220ab notes for information concerning connection diagram and package outline, refer to setion 7.
irl220-223/irf620-623 mtp7n18/7n20 n-channel power mosfets 7a,150-200v www.artschip.com 2 maximum ratings symbol characteristic rating irf220/222 irf620/622 MTP7N20 rating mtp7n18 rating irf222/223 irf622/623 unit v dss drain to source voltage 1 200 180 150 v v dgr drain to gate voltage 1 r gs =20k ? 200 180 150 v v gs gate to source voltage 20 20 20 v t j ,t stg operating junction and storage temperature -55 to +150 -55 to +150 -55 to +150 t l maximum lead temperature for soldering purposes, 1/8? from case for 5s 275 275 275 maximum thermal characteristics irf220-223/irf620-623 mtp7n/20 r ? jc thermal resistance junction to case 3.12 1.67 /w r ? ja thermal resistance junction to ambient 30/80 80 /w p d total power dissipation at t c =25 40 75 w i dm pulsed drain current 2 20 20 a electrical characteristics (t c =25 unless otherwise noted ) symbol characteristic min max unit test conditions off characteristics 200 180 v (br)dss drain source breakdown voltage1 irf220/222/620/622/ MTP7N20 mtp7n18 irf221/223/621/623 150 v v gs =0v, i d =250a 250 a v ds =rated v dss , v gs =0v i dss zero gate voltage drain current 1000 a v ds =0.8xrated v dss , v gs =0v, tc=125 i gss gate-body leakage current irf220-223 irf620-623/mtp7n18/20 100 500 na v gs =20v, v ds =0v
irl220-223/irf620-623 mtp7n18/7n20 n-channel power mosfets 7a,150-200v www.artschip.com 3 electrical characteristics (cont.) (tc=25 unless otherwise noted ) symbol characteristic min max unit test conditions on characteristics 2.0 4.0 v gs(th) gate threshold voltage irf220-223/irf620-623 mtp7n18/20 2.0 4.5 v i d =250a, v ds =v gs i d =1ma, v ds =v gs 0.8 1.2 r ds(on) static drain-source on-resistance2 irf220/221/620/621 irf222/223/622/623 mpt7n18/7n20 0.7 ? v gs =10v, i d =2.5a i d =3.5a 2.45 5.9 v v v gs =10v; i d =3.5a v gs =10v; i d =7.0a v ds(on) drain-source on-voltage 2 mtp7n18/7n20 5.0 v v gs =10v, i d =3.5a t c =100 g fs forward transconductance 1.3 s( ) v ds =10v, i d =2.5a dynamic characteristics ciss input capacitance 600 pf coss output capacitance 300 pf crss reverse transfer capacitance 80 pf v ds =25v, v gs =0v f=1.0mhz switching characteristics (t c =25 , figure 1,2) 3 t d(on) turn-on delay time 40 ns t r rise time 60 ns t d(off) turn-off delay time 100 ns tf fall time 60 ns v dd =100v, i d =2.5a v gs =10v, r gen =50 ? r gs =50 ? qg total gate charge 15 nc v gs =10v, i d =6.0a v dd =45v symbol characteristic typ max unit test conditions source-drain diode characteristics 1.8 v is=5.0a; v gs =0v v sd diode forward voltage 1.4 v i s =4.0a; v gs =0v t rf reverse recovery time 350 ns i s =5.0a; di s /dt=25a/s notes 1. tj=+25 to +150 2. pulse width limited by tj 3. switching time measurements performed on lem tr-58 test equipment.
irl220-223/irf620-623 mtp7n18/7n20 n-channel power mosfets 7a,150-200v www.artschip.com 4 typical electrical characteristics figure 1 switching test circuit typical performance curves figure 3 output characteristics figure 5 transfer characteristics figure 2 switching waveforms figure 4 static drain to source resistance vs drain current figure 6 temperature variation of gate to source threshold voltage
irl220-223/irf620-623 mtp7n18/7n20 n-channel power mosfets 7a,150-200v www.artschip.com 5 typical performance curves (cont) figure 7 capacitance vs drain to source voltage figure 9 forward biased safe operating area for irf220-223 and irf620-630 figure 11 forward biased safe operating area for mtp7n18/7n20 figure 8 gate to source voltage vs total gate charge figure 10 transient thermal resistance vs time for irf220-223 and irf620-623 figure 12 transient thermal resistance vs time for mtp7n18/7n20
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